New Publication: Three-Dimensional Electrical Mapping of Perovskite Films
- SOEL
- Jan 1
- 1 min read
Date: January 1, 2026
The Spin Opto-Electronics Laboratory (SOEL) published a new research article entitled “Three-Dimensional Mapping of Electrical Behavior in Perovskite Films Using Tomographic Conductive Atomic Force Microscopy” on Newton 2, 100367 (2026). This work is a collaborative study with Prof. Chuanxiao Xiao (Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences) and Prof. Fei Zhang (Tianjin University).
This study employed three-dimensional tomographic conductive atomic force microscopy (tc-C-AFM) to directly visualize current distribution and quantitatively identify high-resistance regions in perovskite films treated with different passivation strategies. The results demonstrate that bulk passivation significantly enhances electrical conductivity throughout the entire film. In contrast, surface passivation primarily improves near-surface electrical properties, providing a powerful three-dimensional diagnostic tool for understanding and optimizing perovskite film quality.
SOEL graduate student Jiali Liu performed ultrafast transient reflectance (TR) spectroscopy to quantitatively analyze carrier transport dynamics in perovskite films. By correlating three-dimensional electrical mapping with ultrafast carrier dynamics, this work provides fundamental insights into how dual passivation strategies synergistically improve perovskite film quality and device-relevant transport properties, offering clear guidance for the development of high-performance and stable perovskite optoelectronic devices.
Congratulations to the team, and Happy New Year!
Read the full article at Newton
Three-Dimensional Mapping of Electrical Behavior in Perovskite Films Using Tomographic Conductive Atomic Force Microscopy
M. Li, P. Wu, J. Liu, X. Lang, Y. Shi, X. Liu, H. Tian, Y. Jiang, Y. Gou, Y. Zhang, Z. Yang, J. Ye, Y. Zhai*, F. Zhang*, C. Xiao*
Newton 2, 100367 (2026)
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